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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR911LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO's. Available in a surface-mountable plastic package. This Motorola small-signal plastic transistor offers superior quality and performance at low cost. * High Gain-Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA * Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz * High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz * State-of-the-Art Technology Fine Line Geometry Ion-Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation * Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR911LT1 IC = 60 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON CASE 318-08, STYLE 6 SOT-23 LOW PROFILE MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Power Dissipation @ Tcase = 75C (1) Derate linearly above Tcase = 75C Storage Temperature Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD(max) Tstg TJmax Value 12 20 2.0 60 333 4.44 - 55 to +150 150 Unit Vdc Vdc Vdc mA mW mW/C C C THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol RJC Value 225 Unit C/W DEVICE MARKING MMBR911LT1 = 7P NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. REV 8 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MMBR911LT1 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 12 20 2.0 -- -- -- -- -- -- -- -- 50 Vdc Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 30 mAdc, VCE = 10 Vdc) hFE 30 -- 200 -- DYNAMIC CHARACTERISTICS Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current Gain-Bandwidth Product (VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz) Ccb fT -- -- -- 6.0 1.0 -- pF GHz FUNCTIONAL TESTS Gain @ Noise Figure (IC = 10 mAdc, VCE = 10 Vdc) Noise Figure (IC = 10 mAdc, VCE = 10 Vdc) GNF f = 0.5 GHz f = 1.0 GHz NF f = 0.5 GHz f = 1.0 GHz -- -- 2.0 2.9 -- -- -- -- 17 11 -- -- dB dB f T, CURRENT GAIN-BANDWIDTH PRODUCT (GHz) 10 8 6 4 2 VCE = 10 V f = 1 GHz 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 0 Figure 1. Current Gain-Bandwidth versus Collector Current @ 1.0 GHz MMBR911LT1 2 MOTOROLA RF DEVICE DATA 2.5 Ccb , C ob , OUTPUT CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) 2.5 f = 1 MHz 2 2 1.5 Cib 1.5 1 1 Cob 0.5 Ccb 0.5 f = 1 MHz 0 0 1 2 3 0 0 1 2 3 4 5 6 7 8 9 10 VBE, BASE-EMITTER VOLTAGE (Vdc) Vcb, COLLECTOR-BASE VOLTAGE (Vdc) Figure 2. Input Capacitance versus Base-Emitter Voltage Figure 3. Output Capacitances versus Collector-Base Voltage 20 f = 500 MHz G NF , GAIN AT NOISE FIGURE (dB) 16 NF, NOISE FIGURE (dB) 1 GHz 5 4 f = 1 GHz 3 12 8 2 500 MHz 4 VCE = 10 V VCE = 10 V 0 0 0 10 20 30 0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Gain at Noise Figure versus Collector Current Figure 5. Noise Figure versus Collector Current 25 G NF , GAIN AT NOISE FIGURE (dB) 5 30 VCE = 10 V IC = 30 mA GNF 15 NF 3 2 G U MAX AND |S21 | 2 (dB) 20 NF, NOISE FIGURE (dB) 4 25 20 GUMAX |S21|2 10 15 5 0 0.2 VCE = 10 V IC = 10 mA 0.3 0.5 f, FREQUENCY (GHz) 1 1.5 1 10 0 2 5 0.2 0.3 0.5 f, FREQUENCY (GHz) 1 1.5 2 Figure 6. Gain at Noise Figure and Noise Figure versus Frequency Figure 7. Maximum Unilateral Gain and Insertion Gain versus Frequency MOTOROLA RF DEVICE DATA MMBR911LT1 3 +j50 +j25 +j100 +j150 +j10 2 0 10 +90 +120 f = 0.2 GHz +150 +j250 +j500 100 150 250 500 +60 S11 1.5 25 1 50 0.5 2 2 1.5 1 1 0.5 f = 0.2 GHz 2 0.1 S21 0.5 +30 S12 180 - j500 - j250 16 14 12 10 8 6 4 2 1 f = 0.2 GHz 0.5 f = 0.2 GHz S22 S21 0.2 0.3 0.4 0 S12 - 30 1.5 - j10 -150 - j150 - j25 - j50 - j100 -120 - 90 - 60 Figure 8. Input and Output Reflection Coefficients versus Frequency VCE = 10 V, IC = 30 mA Figure 9. Forward and Reverse Transmission Coefficients versus Frequency VCE = 10 V, IC = 30 mA VCE (Volts) 10 IC (mA) 2.0 f (MHz) 200 500 1000 1500 2000 200 500 1000 1500 2000 200 500 1000 1500 2000 200 500 1000 1500 2000 200 500 1000 1500 2000 S11 |S11| 0.82 0.60 0.47 0.46 0.47 0.66 0.43 0.37 0.38 0.40 0.49 0.33 0.32 0.35 0.37 0.36 0.28 0.29 0.33 0.36 0.32 0.27 0.29 0.34 0.37 - 45 - - 96 - - 149- - 179- 162 - 63- - 117- - 163- 176 160 - 83 - - 134- - 171- 173 159 - 103- - 149- - 176- 172 158 - 114- - 156- - 178- 170 156 |S21| 4.14 3.23 2.16 1.59 1.35 8.63 5.29 3.05 2.17 1.81 12.70 6.42 3.53 2.46 2.04 15.25 6.95 3.73 2.60 2.14 15.64 6.92 3.71 2.58 2.13 S21 145 112 85 71 57 134 100 82 70 57 124 94 80 69 58 114 90 78 68 58 109 88 78 68 57 |S12| 0.06 0.09 0.11 0.13 0.16 0.05 0.07 0.11 0.15 0.19 0.04 0.07 0.12 0.16 0.20 0.03 0.06 0.12 0.17 0.21 0.03 0.06 0.12 0.16 0.21 S12 66 49 49 55 62 64 58 63 65 65 65 66 70 69 66 69 72 73 71 67 71 73 74 72 68 |S22| 0.88 0.71 0.62 0.58 0.56 0.75 0.55 0.48 0.45 0.43 0.62 0.44 0.41 0.38 0.35 0.52 0.39 0.37 0.34 0.32 0.48 0.38 0.37 0.34 0.32 S22 - 16 - 27 - 34 - 43 - 51 - 25 - 31 - 36 - 44 - 51 - 30 - 32 - 36 - 45 - 52 - 32 - 30 - 35 - 43 - 52 - 29 - 27 - 33 - 44 - 51 5.0 10 20 30 Table 1. Common Emitter S-Parameters MMBR911LT1 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. BS 1 2 V G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318-08 ISSUE AF MOTOROLA RF DEVICE DATA MMBR911LT1 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps MMBR911LT1 6 MMBR911LT1/D MOTOROLA RF DEVICE DATA |
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